ME 545 - Energy Band Gap by Four Probe Method

Objective : Energy band gap of Semiconductor material (Ge Crystal ) By four probe method.

Technical Specification :

Power supply unit is housed in metal cabinet and comprises of constant current generator 0-20mA,Oven Power Supply & built in Digital Voltmeter of  0-200mV/2V DC.

Probes Arrangement : It has four individually spring loaded, coated with Zn at the tips.

The probes are collinear and equally spaced.

The whole arrangement is mounted on a suitable stand and leads are provided for current and voltage measurements.

Sample : Ge (Germanium) crystal in the form of a chip slice.

Oven : Maximum Temp. : 200°C

Standard Accessories :

Power chord, Patch chords & Instruction manual.

Crystal (Germanium), Oven with cable, Four probe &Thermometer 200°C

ME 545L Energy Band Gap by Four Probe Method with PC Interface– do– same as ME 545 but with PC Interface.

Power chord, Patch chords & Instruction manual.

Crystal (Germanium), Oven with cable, Four probe &Thermometer 200°C